Zeno at IEDM 2015
As we are celebrating 50th anniversary of Moore's Law, we are excited to present the details of the 1T-SRAM memory technology at the IEDM 2015 conference in Washington, DC. Our 1T-SRAM memory technology provides a 5x smaller cell size compared to the conventional 6T-SRAM, promising to provide an alternative scaling method beyond Moore's Law.
The paper is titled "A Novel Bi-stable 1-Transistor SRAM for High Density Embedded Application" and is a result of the collaborative work with Marvell Semiconductor and Stanford University. #IEDM2015